ZHCSEF6E December 2014 – September 2016 DRV5033-Q1
PRODUCTION DATA.
Figure 24. SOT-23 (DBZ) 封裝
Figure 25. TO-92 (LPG) 封裝
表示霍爾效應(yīng)傳感器(未按比例顯示)?;魻栐糜诜庋b中央位置,容差為 ±100µm。在 DBZ 封裝中,霍爾元件與封裝底部的距離為 0.7mm ± 50µm;在 LPG 封裝中,霍爾元件與封裝底部的距離為 0.987mm ± 50µm。The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.
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這些裝置包含有限的內(nèi)置 ESD 保護(hù)。 存儲(chǔ)或裝卸時(shí),應(yīng)將導(dǎo)線一起截短或?qū)⒀b置放置于導(dǎo)電泡棉中,以防止 MOS 門極遭受靜電損傷。
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.