ZHCSFB8B August 2016 – February 2022 CSD25485F5
PRODUCTION DATA
- 1特性
- 2應(yīng)用
- 3說(shuō)明
- 4Revision History
- 5Specifications
- 6Device and Documentation Support
- 7Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- YJK|3
散熱焊盤(pán)機(jī)械數(shù)據(jù) (封裝 | 引腳)
訂購(gòu)信息
5.3 Typical MOSFET Characteristics
TA = 25°C (unless otherwise stated)
Figure 5-1 Transient Thermal Impedance
| VDS = –5 V | ||
Figure 5-2 Saturation Characteristics
| ID = –0.9 A | VDS = –10 V | ||
| ID = –250 μA | ||
| ID = –0.9 A | ||
| Single pulse, typ min Cu RθJA = 245°C/W | ||||
Figure 5-5 Capacitance
Figure 5-7 On-State Resistance vs Gate-to-Source Voltage
Figure 5-9 Typical Diode Forward Voltage
| Typ min Cu RθJA = 245°C/W | ||